Ultraband Technologies
← Ultraband Technologies

POWER SEMICONDUCTOR PORTFOLIO

Power Discrete
& GaN devices.

High-voltage enhancement solutions combining D-mode GaN with low-voltage MOS technology for compact, efficient fast chargers and power modules.

650–1200 V
GaN-ON-Si · GaN-ON-SiC
QFN · TOLL

POWER DEVICE PORTFOLIO

High-voltage performance, ready to scale.

High-voltage enhancement solutions combining D-mode GaN with low-voltage MOS technology for compact, efficient fast chargers and power modules.

650–1200 VVoltage classes
40–150 mΩTarget RDS(on)
GaN-on-Si / SiCDevice platforms
QFN / TOLLPackage roadmap
Part numberPlatformVoltage / RDS(on)IntegrationPackageStatus
UPDCC065A040PD-mode GaN on SiC650 V40 mΩCascode with LVMOSTOLL-4LPlanning (TBD)
UPDCE065A040PD-mode GaN on SiC650 V40 mΩEmbedded driverTOLL-9LPlanning (TBD)
UPDYE065A150ID-mode GaN on Si650 V150 mΩEmbedded driverQFN 8 × 8 mmDeveloping · 26Q2 ES
UPDCE065A150ID-mode GaN on SiC650 V150 mΩEmbedded driverQFN 8 × 8 mmPlanning · 26Q4 ES
UPDYC065A150ID-mode GaN on Si650 V150 mΩCascode with LVMOSQFN 8 × 8 mmDeveloping · 26Q2 ES
UPDCC065A150ID-mode GaN on SiC650 V150 mΩCascode with LVMOSQFN 8 × 8 mmPlanning · 26Q4 ES
UPDCC120A080PD-mode GaN on SiC1200 V80 mΩCascode with LVMOSTOLL-4LPlanning (TBD)

FAST CHARGER / MODULE ROADMAP

From device development to module verification.

  1. Q2 202565 W FlybackDevelopment
  2. Q3 202565 WVerification / revise
  3. Q1 2026140 W AHBDevelopment
  4. Q2 2026140 WVerification / revise
  5. Next240 W AHBDevelopment

Development roadmap based on the Power Device presentation. Product specifications and availability are subject to change.

POWER DEVICE INQUIRY

Build the next power platform with us.

Tell us your target voltage, current, switching frequency, package, topology or thermal requirements.

sales@ultrabandtech.com ↗